BZX84C2V4 - bzx84c39 350mw surface mount zener diode pb rohs compliance rohs compliance sot-23 features ? planar die construction ? 350 mw power dissipation ? zener voltages from 2.4v ? 39v ? ideally suited for automated assembly processes mechanical data ? case: sot-23, molding plastic ? case material ? ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020a ? terminals: solderable per miil-std-202, method 208 ? polarity: see diagram ? lead free plating ? marking: marking code ? weight: 0.008 grams (approx.) dimensions in inches and (millimeters) maximum ratings and electrical characteristics rating at 25 o c ambient temperature unle ss otherwise specified. type number symbol value units forward voltage @ if = 10ma v f 0.9 v power dissipation (note 1) pd 350 mw thermal resistance junction to ambient air (note 1) r ja 357 k /w operating and storage temperature range t j , t s t g -65 to + 150 o c notes: 1. valid provided that device terminals are kept at ambient temperature. . 2. tested with pulses. period = 5ms, pulse width = 300us . 3. f = 1khz. version: a07
electrical characteristics (ta=25 o c unless otherwise noted) type number marking i zt (note 1) code z zt @ i zt i r vr nom ( v ) min ( v ) max ( v ) m a ohms ohms m a ua v min max BZX84C2V4 z11 2.4 2.2 2.6 5.0 100 600 1.0 50 1.0 -3.5 0 bzx84c2v7 z12 2.7 2.5 2.9 5.0 100 600 1.0 20 1.0 -3.5 0 bzx84c3v0 z13 3.0 2.8 3.2 5.0 95 600 1.0 10 1.0 -3.5 0 bzx84c3v3 z14 3.3 3.1 3.5 5.0 95 600 1.0 5.0 1.0 -3.5 0 bzx84c3v6 z15 3.6 3.4 3.8 5.0 90 600 1.0 5.0 1.0 -3.5 0 bzx84c3v9 z16 3.9 3.7 4.1 5.0 90 600 1.0 3.0 1.0 -3.5 0 bzx84c4v3 z17 4.3 4.0 4.6 5.0 90 600 1.0 3.0 1.0 -3.5 0.0 bzx84c4v7 z1 4.7 4.4 5.0 5.0 80 500 1.0 3.0 2.0 -3.5 0.2 bzx84c5v1 z2 5.1 4.8 5.4 5.0 60 480 1.0 2.0 2.0 -2.7 1.2 bzx84c5v6 z3 5.6 5.2 6.0 5.0 40 400 1.0 1.0 2.0 -2.0 2.5 bzx84c6v2 z4 6.2 5.8 6.6 5.0 10 150 1.0 3.0 4.0 0.4 3.7 bzx84c6v8 z5 6.8 6.4 7.2 5.0 15 80 1.0 2.0 4.0 1.2 4.5 bzx84c7v5 z6 7.5 7.0 7.9 5.0 15 80 1.0 1.0 5.0 2.5 5.3 bzx84c8v2 z7 8.2 7.7 8.7 5.0 15 80 1.0 0.7 5.0 3.2 6.1 bzx84c9v1 z8 9.1 8.5 9.6 5.0 15 100 1.0 0.5 6.0 3.8 7.0 bzx84c10 z9 10 9.4 10.6 5.0 20 150 1.0 0.2 7.0 4.5 8.0 bzx84c11 y1 11 10.4 11.6 5.0 20 150 1.0 0.1 8.0 5.4 9.0 bzx84c12 y2 12 11.4 12.7 5.0 25 150 1.0 0.1 8.0 6.0 10.0 bzx84c13 y3 13 12.4 14.1 5.0 30 170 1.0 0.1 8.0 7.0 11.0 bzx84c15 y4 15 13.8 15.6 5.0 30 200 1.0 0.1 10.5 9.2 13.0 bzx84c16 y5 16 15.3 17.1 5.0 40 200 1.0 0.1 11.2 10.4 14.0 bzx84c18 y6 18 16.8 19.1 5.0 45 225 1.0 0.1 12.6 12.4 16.0 bzx84c20 y7 20 18.8 21.2 5.0 55 225 1.0 0.1 14.0 14.4 18.0 bzx84c22 y8 22 20.8 23.3 5.0 55 250 1.0 0.1 15.4 16.4 20.0 bzx84c24 y9 24 22.8 25.6 5.0 70 250 1.0 0.1 16.8 18.4 22.0 bzx84c27 y10 27 25.1 28.9 2.0 80 300 0.5 0.1 18.9 21.4 25.3 bzx84c30 y11 30 28 32 2.0 80 300 0.5 0.1 21.0 24.4 29.4 bzx84c33 y12 33 31 35 2.0 80 325 0.5 0.1 23.1 27.4 33.4 bzx84c36 y13 36 34 38 2.0 90 350 0.5 0.1 25.2 30.4 37.4 bzx84c39 y14 39 37 41 2.0 130 350 0.5 0.1 27.3 33.4 41.2 notes: 1. valid provided that device terminals are kept at ambient temperature. 2. tested with pulses, 300us pulse width, period = 5ms. 3. f = 1khz. version: a07 typical temerature zener voltage range (note 2) maximum zener maximum reverse coefficient z zk @ i zk mv / o c v z @ i zt impedance (note 3) current @ izt
ratings and characteristic curves (BZX84C2V4 - bzx84c39) fig.1- power derating curve fig.2- zener breakdown characteristics p , power dissip ation (mw) d 0 0 t , ambient temperature, ( c) a o i , zener current (ma) z v , zener voltage (v) z fig.3- zener breakdown characteristics fig.4- junction capacitance vs nominal zener voltage see note 1 100 200 100 200 300 400 500 t = 25 c j o test current i 5.0ma z c2v7 c3v9 c3v3 c4v7 c5v6 c6v8 c8v2 01 2345678910 0 10 20 30 40 50 test current i 5ma z test current i 2ma z c10 c12 c15 c18 c22 c27 c33 c36 t = 25 c j o 010203040 0 30 10 20 v , zener voltage (v) z i , zener current (ma) z c , junction cap acitance (pf) j v , nominal zener voltage (v) z t = 25 c j o v=1v r v=2v r v=2v r v=1v r 1 10 10 100 100 1000 c39
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